IRFU220 Tech Spezifikatioune
Harris Corporation - IRFU220 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - IRFU220
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-251AA | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.9A, 10V | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A (Tc) | |
| Basis Produktnummer | IRFU2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation IRFU220.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | IRFU220 | IRFU214BTU | IRFU220BTU | IRFU220NPBF |
| Hiersteller | Harris Corporation | Fairchild Semiconductor | Fairchild Semiconductor | Infineon Technologies |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V | 275 pF @ 25 V | - | 300 pF @ 25 V |
| Package protegéieren | Bulk | Bulk | Bulk | Tube |
| FET Feature | - | - | - | - |
| Serie | - | - | * | HEXFET® |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.9A, 10V | 2Ohm @ 1.1A, 10V | - | 600mOhm @ 2.9A, 10V |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 200 V | 250 V | - | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 10.5 nC @ 10 V | - | 23 nC @ 10 V |
| Basis Produktnummer | IRFU2 | - | - | IRFU220 |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | - | 4V @ 250µA |
| Supplier Device Package | TO-251AA | I-PAK | - | IPAK (TO-251AA) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A (Tc) | 2.2A (Tc) | - | 5A (Tc) |
IRFU220B MOSFairchild (onsemi)IRFU214B
IRFU214 MOSElectro-Films (EFI) / VishayIRFU220AFSCIRFU214BA3HDIRFU214BTUFairchild SemiconductorN-CHANNEL POWER MOSFETIRFU220BTUFairchild SemiconductorIRFU220 - HEXFET N-CHANNEL POWERIRFU220NPBFInfineon TechnologiesMOSFET N-CH 200V 5A IPAK
IRFU214PBFVishay SiliconixMOSFET N-CH 250V 2.2A TO251AAIRFU220NInfineon TechnologiesMOSFET N-CH 200V 5A IPAKIRFU220N FU220NIRIRFU214B A3HDIRFU210PBF MOSElectro-Films (EFI) / VishayIRFU220 MOSFairchild (onsemi)IRFU214PBF MOSElectro-Films (EFI) / VishayIRFU220PBFVishay SiliconixMOSFET N-CH 200V 4.8A TO251AAIRFU214Vishay SiliconixMOSFET N-CH 250V 2.2A TO251AAIRFU220BFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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