IRF9633 Tech Spezifikatioune
Harris Corporation - IRF9633 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - IRF9633
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V | |
| Power Dissipation (Max) | 75W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation IRF9633.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | IRF9633 | IRF9630PBF | IRF9630 | IRF9640 |
| Hiersteller | Harris Corporation | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Serie | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | 6.5A (Tc) | 6.5A (Tc) | 11A (Tc) |
| Power Dissipation (Max) | 75W (Tc) | 74W (Tc) | 74W (Tc) | 125W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | 700 pF @ 25 V | 700 pF @ 25 V | 1200 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 29 nC @ 10 V | 29 nC @ 10 V | 44 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V | 800mOhm @ 3.9A, 10V | 800mOhm @ 3.9A, 10V | 500mOhm @ 6.6A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 150 V | 200 V | 200 V | 200 V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
IRF9630PBFVishay SiliconixMOSFET P-CH 200V 6.5A TO220ABIRF9630Vishay SiliconixMOSFET P-CH 200V 6.5A TO220ABIRF9640Vishay SiliconixMOSFET P-CH 200V 11A TO220ABIRF9640SVishay SiliconixMOSFET P-CH 200V 11A D2PAKIRF9630STRRPBFIRIRF9640NHARRISIRF9630SVishay SiliconixMOSFET P-CH 200V 6.5A D2PAKIRF9640LVishay SiliconixMOSFET P-CH 200V 11A I2PAKIRF9640NPBFIRIRF9630STRLPBFVishay SiliconixMOSFET P-CH 200V 6.5A D2PAK
IRF9630PBF MOSElectro-Films (EFI) / VishayIRF9630SPBFVishay SiliconixMOSFET P-CH 200V 6.5A D2PAKIRF9640 MEXIRIRF9640PBF MOSElectro-Films (EFI) / VishayIRF9640S MOSIRIRF9630STRRVishay SiliconixMOSFET P-CH 200V 6.5A D2PAKIRF9630S MOSIRIRF9640PBFVishay SiliconixMOSFET P-CH 200V 11A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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