IRF532 Tech Spezifikatioune
Harris Corporation - IRF532 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - IRF532
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8.3A, 10V | |
| Power Dissipation (Max) | 79W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation IRF532.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | IRF532 | IRF530STRRPBF | IRF530STRLPBF | IRF540 |
| Hiersteller | Harris Corporation | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | TO-220AB | D²PAK (TO-263) | D²PAK (TO-263) | TO-220AB |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8.3A, 10V | 160mOhm @ 8.4A, 10V | 160mOhm @ 8.4A, 10V | 77mOhm @ 17A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | 26 nC @ 10 V | 26 nC @ 10 V | 72 nC @ 10 V |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | 670 pF @ 25 V | 670 pF @ 25 V | 1700 pF @ 25 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 79W (Tc) | 3.7W (Ta), 88W (Tc) | 3.7W (Ta), 88W (Tc) | 150W (Tc) |
| Serie | - | - | - | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 14A (Tc) | 14A (Tc) | 28A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
IRF530STRPBFIRIRF533IRF530STRRPBFVishay SiliconixMOSFET N-CH 100V 14A TO263IRF530STRLPBFVishay SiliconixMOSFET N-CH 100V 14A D2PAKIRF540Vishay SiliconixMOSFET N-CH 100V 28A TO220AB
IRF540STMicroelectronicsMOSFET N-CH 100V 22A TO220ABIRF540APBFVBSEMIIRF531SEC
IRF540AonsemiMOSFET N-CH 100V 28A TO220-3
IRF540onsemiMOSFET N-CH 100V 28A TO220ABIRF540NIRIRF530STRLPBF MOSIRIRF530SPBFVishay SiliconixMOSFET N-CH 100V 14A TO263IRF540A MOSIRIRF530SVishay SiliconixMOSFET N-CH 100V 14A D2PAKIRF540FIVBSEMIIRF530S MOSIRIRF530SPBF MOSIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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