NGB8207ABNT4G Tech Spezifikatioune
Littelfuse Inc. - NGB8207ABNT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Littelfuse Inc. - NGB8207ABNT4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Littelfuse | |
| Voltage - Collector Emitter Breakdown (Max) | 365 V | |
| Vce (on) (Max) @ Vge, Ic | 2.2V @ 3.7V, 10A | |
| Test Condition | - | |
| Td (on / off) @ 25 ° C | - | |
| Energie schalten | - | |
| Supplier Device Package | D2PAK | |
| Serie | - | |
| Power - Max | 165 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Type | Logic | |
| IGBT Type | - | |
| Aktuell - Sammler Pulséiert (Icm) | 50 A | |
| Aktuell - Sammler (Ic) (Max) | 20 A | |
| Basis Produktnummer | NGB8207A |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Littelfuse Inc. NGB8207ABNT4G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | NGB8207ABNT4G | NGB8206NTF4G | NGB8204ANT4G | NGB8245NT4G |
| Hiersteller | Littelfuse Inc. | onsemi | onsemi | Littelfuse Inc. |
| Input Type | Logic | Logic | Logic | Logic |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Aktuell - Sammler Pulséiert (Icm) | 50 A | - | 50 A | 50 A |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
| Supplier Device Package | D2PAK | D2PAK | D2PAK | D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| IGBT Type | - | - | - | - |
| Serie | - | - | - | - |
| Test Condition | - | - | - | - |
| Basis Produktnummer | NGB8207A | - | - | NGB8245 |
| Power - Max | 165 W | 150 W | 115 W | 150 W |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Energie schalten | - | - | - | - |
| Voltage - Collector Emitter Breakdown (Max) | 365 V | 390 V | 430 V | 500 V |
| Td (on / off) @ 25 ° C | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 20 A | 20 A | 18 A | 20 A |
| Vce (on) (Max) @ Vge, Ic | 2.2V @ 3.7V, 10A | 1.9V @ 4.5V, 20A | 2.5V @ 4V, 15A | 2V @ 4V, 15A |
Eroflueden NGB8207ABNT4G PDF DataDhusts an Littelfuse Inc. Dokumentatioun fir NGB8207ABNT4G - Littelfuse Inc..
NGB8206NTF4GonsemiINSULATED GATE BIPOLAR TRANSISTONGB8204ANT4GonsemiINSULATED GATE BIPOLAR TRANSISTONGB8245NT4GLittelfuse Inc.IGBT 490V 20A 150W D2PAK3
NGB8206NT4GonsemiIGNITION IGBT 20 A, 350 V, N-CHANGB8206ANT4GonsemiIGBT, 20A, 390V, N-CHANNELNGB8206ANT4GLittelfuse Inc.IGBT 390V 20A 150W D2PAK3NGB8204ANT4GLittelfuse Inc.IGBT 430V 18A D2PAKNGB8204ABNT4GAMI Semiconductor/onsemiNGB8207ABNT4GonsemiINSULATED GATE BIPOLAR TRANSISTONGB8206NTF4GLittelfuse Inc.IGBT 390V 20A D2PAKNGB8206NGonsemiIGBT 390V 20A 150W D2PAKNGB8207NGAMI Semiconductor/onsemiNGB8207ANT4GonsemiIGBT 365V 20A 165W D2PAK3NGB8206NT4GLittelfuse Inc.IGBT 390V 20A D2PAKNGB8202NAMI Semiconductor/onsemiNGB8202NT4GonsemiIGBT 440V 20A 150W D2PAKNGB8204NT4GonsemiIGBT 430V 18A 115W D2PAKNGB8206ANTF4GONsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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