G2002A Tech Spezifikatioune
Goford Semiconductor - G2002A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Goford Semiconductor - G2002A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Goford Semiconductor | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-6L | |
| Serie | G | |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 1A, 10V | |
| Power Dissipation (Max) | 2.5W (Tc) | |
| Package / Case | SOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Goford Semiconductor G2002A.
| Produktiounsattriff | |
|
|
|
|---|---|---|---|---|
| Part Number | G2002A | G2003A | G2001RG2U | G201-1D |
| Hiersteller | Goford Semiconductor | Goford Semiconductor | GTM | AUO |
| Entworf fir Source Voltage (Vdss) | 200 V | 190 V | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 12 nC @ 10 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Package / Case | SOT-23-6 | TO-236-3, SC-59, SOT-23-3 | - | - |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Serie | G | G | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Supplier Device Package | SOT-23-6L | SOT-23-3 | - | - |
| Power Dissipation (Max) | 2.5W (Tc) | 1.8W (Ta) | - | - |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 100 V | 580 pF @ 25 V | - | - |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 1A, 10V | 540mOhm @ 2A, 10V | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 3A (Ta) | - | - |
Eroflueden G2002A PDF DataDhusts an Goford Semiconductor Dokumentatioun fir G2002A - Goford Semiconductor.
G2003AGoford SemiconductorN190V, 3A,RD<540M@10V,VTH1.0V~3.G2001RG2UGTMG201-1DAUOG2009RZ1UGMTG200-103-B3NVIDIAG200-350-B3NVIDIAG200-352-B3NVIDIA
G20100CF5LITEONG20100CF5A-F5LITEONG201-1JAUOG2002BRV1UGMT
G2006RSTMicroelectronicsIGBT ModuleG200-105-B3NVIDIAG2003RB1UGMTG2007RG1UGMTG2002RV1UGMTG200-102-A2NVIDIAG200-103-B2NVIDIA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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