MUR10060CT Tech Spezifikatioune
GeneSiC Semiconductor - MUR10060CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - MUR10060CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 50 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | Twin Tower | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 110 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Twin Tower | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 50A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor MUR10060CT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MUR10060CT | MUR1020CT | MUR10020CT | MUR10040CT |
| Hiersteller | GeneSiC Semiconductor | Yangjie Technology | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Supplier Device Package | Twin Tower | TO-220AB | Twin Tower | Twin Tower |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Package / Case | Twin Tower | TO-220-3 | Twin Tower | Twin Tower |
| Mounting Type | Chassis Mount | Through Hole | Chassis Mount | Chassis Mount |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 50 V | 10 µA @ 200 V | 25 µA @ 50 V | 25 µA @ 50 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 50 A | 975 mV @ 5 A | 1.3 V @ 50 A | 1.3 V @ 50 A |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 200 V | 200 V | 400 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 110 ns | 35 ns | 75 ns | 90 ns |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 50A | 10A | 50A | 50A |
Eroflueden MUR10060CT PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir MUR10060CT - GeneSiC Semiconductor.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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