MBRT30060 Tech Spezifikatioune
GeneSiC Semiconductor - MBRT30060 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - MBRT30060
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 150 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | Three Tower | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Three Tower | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 20 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 150A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor MBRT30060.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MBRT30060 | MBRT20080 | MBRT30030 | MBRT30040 |
| Hiersteller | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 150A | 100A | 150A | 150A |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 80 V | 30 V | 40 V |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 20 V | 1 mA @ 20 V | 1 mA @ 20 V | 1 mA @ 20 V |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Supplier Device Package | Three Tower | Three Tower | Three Tower | Three Tower |
| Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 150 A | 880 mV @ 100 A | 750 mV @ 150 A | 750 mV @ 150 A |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | Three Tower | Three Tower | Three Tower | Three Tower |
Eroflueden MBRT30060 PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir MBRT30060 - GeneSiC Semiconductor.
MBRT20080GeneSiC SemiconductorDIODE MODULE 80V 100A 3TOWERMBRT401200IXFNIGBT ModuleMBRT30030GeneSiC SemiconductorDIODE MODULE 30V 150A 3TOWERMBRT30040GeneSiC SemiconductorDIODE MODULE 40V 150A 3TOWERMBRT300100GeneSiC SemiconductorDIODE MODULE 100V 150A 3TOWERMBRT30035GeneSiC SemiconductorDIODE MODULE 35V 150A 3TOWERMBRT301200IXFNIGBT ModuleMBRT400150GeneSiC SemiconductorDIODE SCHOTTKY 150V 200A 3 TOWER
MBRX02520Micro Commercial Components (MCC)MBRT30090IXFNIGBT ModuleMBRT30045GeneSiC SemiconductorDIODE MODULE 45V 150A 3TOWERMBRT300200GeneSiC SemiconductorDIODE SCHOTTKY 200V 150A 3 TOWER
MBRU10100CTTaiwan SemiconductorMBRT40080GeneSiC SemiconductorDIODE MODULE 80V 200A 3TOWERMBRT40090IXFNIGBT ModuleMBRT300150GeneSiC SemiconductorDIODE SCHOTTKY 150V 150A 3 TOWERMBRT30020GeneSiC SemiconductorDIODE MODULE 20V 150A 3TOWERMBRT40045GeneSiC SemiconductorDIODE MODULE 45V 200A 3TOWER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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