MBR20040CT Tech Spezifikatioune
GeneSiC Semiconductor - MBR20040CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - MBR20040CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 650 mV @ 100 A | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Technologie | Schottky | |
| Supplier Device Package | Twin Tower | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Twin Tower | |
| Package protegéieren | Bulk | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 5 mA @ 20 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 200A (DC) | |
| Basis Produktnummer | MBR20040 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor MBR20040CT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MBR20040CT | MBR20035CT | MBR20045CT | MBR20030CT |
| Hiersteller | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 200A (DC) | 200A (DC) | 200A (DC) | 200A (DC) |
| Aktuell - Reverse Leakage @ Vr | 5 mA @ 20 V | 5 mA @ 20 V | 5 mA @ 20 V | 5 mA @ 20 V |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Supplier Device Package | Twin Tower | Twin Tower | Twin Tower | Twin Tower |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 35 V | 45 V | 30 V |
| Voltage - Viru (Vf) (Max) @ Wann | 650 mV @ 100 A | 650 mV @ 100 A | 650 mV @ 100 A | 650 mV @ 100 A |
| Basis Produktnummer | MBR20040 | MBR20035 | MBR20045 | MBR20030 |
| Package / Case | Twin Tower | Twin Tower | Twin Tower | Twin Tower |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Eroflueden MBR20040CT PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir MBR20040CT - GeneSiC Semiconductor.
MBR20035CTGeneSiC SemiconductorDIODE MODULE 35V 200A 2TOWERMBR20025CTLMOTOROLAIGBT ModuleMBR20030MOTOROLAIGBT ModuleMBR20035RMOTOROLAIGBT ModuleMBR20045RMOTOROLAIGBT ModuleMBR20045MOTOROLAIGBT ModuleMBR20060MOTOROLAIGBT ModuleMBR20045CTGeneSiC SemiconductorDIODE MODULE 45V 200A 2TOWERMBR20050CTMOTOROLAIGBT ModuleMBR20060RMOTOROLAIGBT ModuleMBR20040MOTOROLAIGBT ModuleMBR20030RMOTOROLAIGBT ModuleMBR20030CTGeneSiC SemiconductorDIODE MODULE 30V 200A 2TOWERMBR20060CTGeneSiC SemiconductorDIODE MODULE 60V 200A 2TOWERMBR20030CTLMOTOROLAIGBT ModuleMBR20050TLMOTOROLAIGBT ModuleMBR20035MOTOROLAIGBT ModuleMBR20040RMOTOROLAIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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