GBU6J Tech Spezifikatioune
GeneSiC Semiconductor - GBU6J technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - GBU6J
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Peak Reverse (Max) | 600 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 6 A | |
| Technologie | Standard | |
| Supplier Device Package | GBU | |
| Serie | - | |
| Package / Case | 4-SIP, GBU |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6 A | |
| Basis Produktnummer | GBU6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor GBU6J.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBU6J | GBU608 | GBU6J | GBU608 |
| Hiersteller | GeneSiC Semiconductor | SMC Diode Solutions | Fairchild Semiconductor | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Voltage - Peak Reverse (Max) | 600 V | 800 V | 600 V | 800 V |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | 5 µA @ 800 V | 5 µA @ 600 V | 5 µA @ 800 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6 A | 6 A | 4.2 A | 6 A |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 6 A | 1.1 V @ 6 A | 1 V @ 6 A | 1 V @ 3 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | GBU6 | GBU608 | - | - |
| Package protegéieren | Bulk | Tube | Bulk | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | 4-SIP, GBU | 4-ESIP | 4-ESIP, GBU | 4-ESIP, GBU |
| Supplier Device Package | GBU | GBU | GBU | GBU |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
Eroflueden GBU6J PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir GBU6J - GeneSiC Semiconductor.
GBU608SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 6A GBU
GBU608-TULITEONGBU6JFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,GBU608Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 6A GBU
GBU6J_B0_10001-PECPANJIT
GBU6JDiotec SemiconductorBRIDGE RECT 1PHASE 600V 4.2A GBUGBU608-LSLITEONGBU608Diodes IncorporatedBRIDGE RECT 1PHASE 800V 6A GBU
GBU6J-E3/22Electro-Films (EFI) / Vishay
GBU6JonsemiBRIDGE RECT 1PHASE 600V 6A GBUGBU610SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 6A GBUGBU610Diodes IncorporatedBRIDGE RECT 1PHASE 1KV 6A GBUGBU610Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 6A GBUGBU6J-E3/72Electro-Films (EFI) / Vishay
GBU6J-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 3.8A GBUGBU6K-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 3.8A GBU
GBU6JSURGE6A -600V - GBU - BRIDGEGBU6J-E3/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 3.8A GBU| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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