GBPC2501W Tech Spezifikatioune
GeneSiC Semiconductor - GBPC2501W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - GBPC2501W
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Peak Reverse (Max) | 50 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC-W | |
| Serie | - | |
| Package / Case | 4-Square, GBPC-W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | |
| Basis Produktnummer | GBPC2501 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor GBPC2501W.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | GBPC2501W | GBPC1510W | GBPC2501W | GBPC2501W |
| Hiersteller | GeneSiC Semiconductor | onsemi | SMC Diode Solutions | Diodes Incorporated |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 1000 V | 5 µA @ 100 V | 5 µA @ 100 V |
| Basis Produktnummer | GBPC2501 | GBPC1510 | GBPC2501 | GBPC2501 |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | 15 A | 25 A | 25 A |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | 1.1 V @ 7.5 A | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Voltage - Peak Reverse (Max) | 50 V | 1 kV | 100 V | 100 V |
| Supplier Device Package | GBPC-W | GBPC-W | GBPC-W | GBPC-W |
| Package / Case | 4-Square, GBPC-W | 4-Square, GBPC-W | 4-Square, GBPC-W | 4-Square, GBPC-W |
| Package protegéieren | Bulk | Tray | Tape & Box (TB) | Tray |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
Eroflueden GBPC2501W PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir GBPC2501W - GeneSiC Semiconductor.
GBPC1510WonsemiBRIDGE RECT 1P 1KV 15A GBPC-WGBPC2501WSMC Diode SolutionsBRIDGE RECT 1P 100V 25A GBPC-WGBPC2501WDiodes IncorporatedBRIDGE RECT 1P 100V 25A GBPC-WGBPC2502WSMC Diode SolutionsBRIDGE RECT 1P 200V 25A GBPC-W
GBPC1510WTaiwan Semiconductor Corporation15A, 1000V, STANDARD BRIDGE RECT
GBPC1510WSURGE15A -1000V - GBPC-W - BRIDGEGBPC2502WGeneSiC SemiconductorBRIDGE RECT 1P 200V 25A GBPC-WGBPC1510WDiodes IncorporatedBRIDGE RECT 1PH 1KV 15A GBPC-WGBPC2502WDiodes IncorporatedBRIDGE RECT 1PH 200V 25A GBPC-W
GBPC1510SURGE15A -1000V - GBPC - BRIDGEGBPC2504Taiwan Semiconductor Corporation25A, 400V, STANDARD BRIDGE RECTI
GBPC1510WFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,GBPC2502WonsemiBRIDGE RECT 1P 200V 25A GBPC-WGBPC2501WonsemiBRIDGE RECT 1P 100V 25A GBPC-WGBPC1510WGeneSiC SemiconductorBRIDGE RECT 1P 1KV 15A GBPC-W
GBPC25008WElectro-Films (EFI) / VishayIGBT Module
GBPC1510WYangjie TechnologyDiodes - Bridge Rectifiers GBPC-GBPC2502WFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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