GBJ25M Tech Spezifikatioune
GeneSiC Semiconductor - GBJ25M technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - GBJ25M
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 12.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBJ | |
| Serie | - | |
| Package / Case | 4-SIP, GBJ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | |
| Basis Produktnummer | GBJ25 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor GBJ25M.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBJ25M | GBJ25L06 | GBJ25J | GBJ3510 |
| Hiersteller | GeneSiC Semiconductor | Diodes Incorporated | SURGE | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | 10 µA @ 600 V | 5 µA @ 600 V | 5 µA @ 1000 V |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | 25 A | 3.5 A | 35 A |
| Supplier Device Package | GBJ | GBJ | GBJ(5S) | GBJ |
| Basis Produktnummer | GBJ25 | - | - | - |
| Package protegéieren | Bulk | - | Bag | Box |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 12.5 A | 0.92 V @ 12.5 A | 1 V @ 12.5 A | 1.05 V @ 17.5 A |
| Serie | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Voltage - Peak Reverse (Max) | 1 kV | 600 V | 600 V | 1 kV |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, KBJ | 4-SIP, GBJ |
Eroflueden GBJ25M PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir GBJ25M - GeneSiC Semiconductor.
GBJ25JLLITEONGBJ25V10LITEONGBJ25L06Diodes IncorporatedMEDIUM/HIGH POWER BRIDGE GBJ TUBGBJ25JSURGE25A -600V - GBJ - BRIDGEGBJ3510Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 35A 6KBJGBJ3510-FDiodes IncorporatedBRIDGE RECT 1PHASE 1KV 3.6A GBJGBJ3508Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 35A 6KBJ
GBJ25KGeneSiC Semiconductor800V 25A GBJ SINGLE PHASE BRIDGE
GBJ25KGood-Ark SemiconductorBRIDGE RECTIFIER, GENERAL PURPOS
GBJ3510SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 35A GBJGBJ3508SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 35A GBJGBJ25MSURGE25A -1000V - GBJ - BRIDGEGBJ25ALITEONGBJ2510FLITEON
GBJ3508HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIEGBJ25V08LITEON
GBJ2510-FDiodes IncorporatedBRIDGE RECT 1PHASE 1KV 25A GBJGBJ25JGeneSiC Semiconductor600V 25A GBJ SINGLE PHASE BRIDGE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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