GB2X50MPS12-227 Tech Spezifikatioune
GeneSiC Semiconductor - GB2X50MPS12-227 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - GB2X50MPS12-227
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.8 V @ 50 A | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | SOT-227 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | SiC Schottky MPS™ | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SOT-227-4, miniBLOC | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 2 Independent | |
| Aktuell - Reverse Leakage @ Vr | 40 µA @ 1200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 93A (DC) | |
| Basis Produktnummer | GB2X50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor GB2X50MPS12-227.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GB2X50MPS12-227 | MBR2045CT | RB425DT146 | GB2X100MPS12-227 |
| Hiersteller | GeneSiC Semiconductor | Taiwan Semiconductor Corporation | Rohm Semiconductor | GeneSiC Semiconductor |
| Diode Configuration | 2 Independent | 1 Pair Common Cathode | 1 Pair Common Cathode | 2 Independent |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 150°C | 125°C (Max) | -55°C ~ 175°C |
| Package / Case | SOT-227-4, miniBLOC | TO-220-3 | TO-236-3, SC-59, SOT-23-3 | SOT-227-4, miniBLOC |
| Technologie | SiC (Silicon Carbide) Schottky | Schottky | Schottky | SiC (Silicon Carbide) Schottky |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 93A (DC) | 20A | 100mA | 185A (DC) |
| Mounting Type | Chassis Mount | Through Hole | Surface Mount | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed | No Recovery Time > 500mA (Io) |
| Supplier Device Package | SOT-227 | TO-220AB | SMD3 | SOT-227 |
| Basis Produktnummer | GB2X50 | MBR2045 | RB425 | GB2X100 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.8 V @ 50 A | 840 mV @ 20 A | 550 mV @ 100 mA | 1.8 V @ 100 A |
| Aktuell - Reverse Leakage @ Vr | 40 µA @ 1200 V | 100 µA @ 45 V | 30 µA @ 10 V | 80 µA @ 1200 V |
| Reverse Recovery Time (trr) | 0 ns | - | - | 0 ns |
| Serie | SiC Schottky MPS™ | - | - | SiC Schottky MPS™ |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 45 V | 40 V | 1200 V |
| Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Eroflueden GB2X50MPS12-227 PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir GB2X50MPS12-227 - GeneSiC Semiconductor.
GB201212K800TMGB215AHANAMBR2045CTTaiwan Semiconductor CorporationDIODE SCHOTTKY 45V 20A TO220ABGB25XF120KIRIGBT ModuleGB201209D400TTJKMTGB201209D500TTZKRB425DT146Rohm SemiconductorDIODE ARRAY SCHOTTKY 40V SMD3
GB2000033Diodes IncorporatedCRYSTAL 20.0000MHZ 18PFGB200MD120KIRIGBT ModuleGB203-3PLSGB2X100MPS12-227GeneSiC SemiconductorSIC DIODE 1200V 200A SOT-227GB20600.HD29L1-B112HDIC
FFPF05U60DNTUonsemiDIODE ARRAY GP 600V 5A TO220F
STTH16R04CFPSTMicroelectronicsDIODE ARRAY GP 400V 8A TO220FPGB25XF120K/2IRIGBT ModuleGB200TS60NPBFIRIGBT ModuleGB25RF120KIRIGBT ModuleGB25XF120K/1IRIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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