1N3889 Tech Spezifikatioune
GeneSiC Semiconductor - 1N3889 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N3889
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.4 V @ 12 A | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-4 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 200 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N3889 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N3889.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N3889 | 1N3890 | 1N3890 | 1N3889 |
| Hiersteller | GeneSiC Semiconductor | Solid State Inc. | GeneSiC Semiconductor | Microchip Technology |
| Voltage - Viru (Vf) (Max) @ Wann | 1.4 V @ 12 A | 1.5 V @ 38 A | 1.4 V @ 12 A | 1.5 V @ 20 A |
| Serie | - | - | - | Military, MIL-PRF-19500/304 |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 100 V | 100 V | 50 V |
| Reverse Recovery Time (trr) | 200 ns | 400 ns | 200 ns | 200 ns |
| Capacitance @ Vr, F. | - | - | - | 115pF @ 10V, 1MHz |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 175°C | -65°C ~ 150°C | -65°C ~ 175°C |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
| Technologie | Standard | Standard | Standard | Standard |
| Supplier Device Package | DO-4 | DO-4 | DO-4 | DO-203AA (DO-4) |
| Basis Produktnummer | 1N3889 | - | 1N3890 | 1N3889 |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Chassis, Stud Mount | Stud Mount |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 50 V | 25 µA @ 100 V | 25 µA @ 50 V | 10 µA @ 50 V |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Eroflueden 1N3889 PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N3889 - GeneSiC Semiconductor.
1N3887RJANTXMSC/STIGBT Module1N3890Solid State Inc.DIODE GEN PURP 100V 12A DO41N3890GeneSiC SemiconductorDIODE GEN PURP 100V 12A DO41N3889Microchip TechnologyFAST RECOVERY RECTIFIER1N3889Solid State Inc.DIODE GEN PURP 50V 12A DO41N3889RMicrochip TechnologyFAST RECOVERY RECTIFIER1N3886RMSCIGBT Module1N3889ASolid State Inc.12 AMP FAST RECOVERY RECTIFIER D1N3887MSCIGBT Module1N3887JANMSC/STIGBT Module1N3889JANTXMSC/STIGBT Module
1N3889ARMicrosemiIGBT Module1N3889RGeneSiC SemiconductorDIODE GEN PURP REV 50V 12A DO41N3888MSCIGBT Module1N3890ASolid State Inc.12 AMP FAST RECOVERY RECTIFIER D1N3887JANTXMSC/STIGBT Module1N3887RMSCIGBT Module1N3890Microchip TechnologyFAST RECOVERY RECTIFIER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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