1N3293A Tech Spezifikatioune
GeneSiC Semiconductor - 1N3293A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N3293A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 100 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-205AA (DO-8) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-205AA, DO-8, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -40°C ~ 200°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 17 mA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N3293 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N3293A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N3293A | 1N3293A | 1N3293A | 1N3293AR |
| Hiersteller | GeneSiC Semiconductor | Solid State Inc. | Microchip Technology | Powerex Inc. |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Chassis, Stud Mount |
| Technologie | Standard | Standard | Standard | Standard, Reverse Polarity |
| Package / Case | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud |
| Supplier Device Package | DO-205AA (DO-8) | DO-8 | DO-205AA (DO-8) | DO-205AA (DO-8) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 100 A | 1.1 V @ 200 A | 1.1 V @ 200 A | 1.5 V @ 100 A |
| Package protegéieren | Bulk | Box | Bulk | Bulk |
| Basis Produktnummer | 1N3293 | - | 1N3293 | 1N3293 |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 600 V | 600 V |
| Aktuell - Reverse Leakage @ Vr | 17 mA @ 600 V | 50 µA @ 600 V | 50 µA @ 600 V | 17 mA @ 600 V |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -40°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -40°C ~ 200°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | 150A | 150A | 100A |
Eroflueden 1N3293A PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N3293A - GeneSiC Semiconductor.
1N3293ASolid State Inc.DIODE GEN PURP 600V 150A DO81N3293AMicrochip TechnologySTANDARD RECTIFIER
1N3292RBMicrosemiIGBT Module1N3293ARPowerex Inc.DIODE GP REV 600V 100A DO205AA1N3293ARMicrochip TechnologySTANDARD RECTIFIER1N3293RASolid State Inc.DIODE GEN PURP REV 600V 150A DO8
1N3293Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 100A DO205AA1N3293Solid State Inc.DIODE GEN PURP 600V 100A DO81N3293Microchip TechnologySTANDARD RECTIFIER1N3293RVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 100A DO205AA1N3292RMicrochip TechnologySTANDARD RECTIFIER1N3293RSolid State Inc.DIODE GEN PURP REV 600V 100A DO81N3293APowerex Inc.DIODE GEN PURP 600V 100A DO205AA1N3293RBMicrosemiIGBT Module
1N3293ARGeneSiC SemiconductorDIODE GP REV 600V 100A DO205AA1N3293RMicrochip TechnologySTANDARD RECTIFIER1N3292RASolid State Inc.DIODE GEN PURP REV 500V 150A DO81N3294Microchip TechnologySTANDARD RECTIFIER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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