1N1200A Tech Spezifikatioune
GeneSiC Semiconductor - 1N1200A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N1200A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-4 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AA, DO-4, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N1200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N1200A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N1200A | 1N1199BR | 1N1199R | 1N1200A |
| Hiersteller | GeneSiC Semiconductor | Microchip Technology | Solid State Inc. | Microchip Technology |
| Capacitance @ Vr, F. | - | - | - | - |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Technologie | Standard | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 50 V | 10 µA @ 50 V | 10 µA @ 100 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12 A | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A |
| Supplier Device Package | DO-4 | DO-4 (DO-203AA) | DO-4 | DO-4 (DO-203AA) |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Box | Bulk |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Basis Produktnummer | 1N1200 | 1N1199 | - | 1N1200 |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 50 V | 50 V | 100 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Eroflueden 1N1200A PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N1200A - GeneSiC Semiconductor.
1N1199BRMicrochip TechnologySTANDARD RECTIFIER1N1199RSolid State Inc.DIODE GEN PURP REV 50V 12A DO41N1200AMicrochip TechnologySTANDARD RECTIFIER1N1199CMicrochip TechnologySTANDARD RECTIFIER1N1199RASolid State Inc.DIODE GEN PURP REV 50V 12A DO4
1N1200ARGeneSiC SemiconductorDIODE GEN PURP REV 100V 12A DO41N1200BSolid State Inc.DIODE GEN PURP 100V 12A DO41N1200Microchip TechnologySTANDARD RECTIFIER1N1199RBSolid State Inc.DIODE GEN PURP REV 50V 12A DO41N1200BRMicrochip TechnologySTANDARD RECTIFIER1N1200ARMicrochip TechnologySTANDARD RECTIFIER1N1200CMicrochip TechnologySTANDARD RECTIFIER1N1200BMicrochip TechnologySTANDARD RECTIFIER1N1199BSolid State Inc.DIODE GEN PURP 50V 12A DO41N1200RMicrochip TechnologySTANDARD RECTIFIER1N1200ASolid State Inc.DIODE GEN PURP 100V 12A DO41N1199RMicrochip TechnologySTANDARD RECTIFIER1N1200Solid State Inc.DIODE GEN PURP 100V 12A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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