1N1186R Tech Spezifikatioune
GeneSiC Semiconductor - 1N1186R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N1186R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AB, DO-5, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N1186R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N1186R.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N1186R | 1N1187R | 1N1186 | 1N1188 |
| Hiersteller | GeneSiC Semiconductor | Microchip Technology | Solid State Inc. | Solid State Inc. |
| Supplier Device Package | DO-5 | DO-203AB (DO-5) | DO-4 | DO-5 |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 300 V | - | 10 µA @ 400 V |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | 40A | 12A | 40A |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Box | Box |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AA, DO-4, Stud | DO-203AB, DO-5, Stud |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Technologie | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 300 V | - | 400 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | 1.19 V @ 90 A | 1.2 V @ 30 A | 1.19 V @ 90 A |
| Basis Produktnummer | 1N1186R | 1N1187 | - | - |
Eroflueden 1N1186R PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N1186R - GeneSiC Semiconductor.
1N1187RMicrochip TechnologySTANDARD RECTIFIER1N1186Solid State Inc.DIODE GEN PURP 12A DO41N1188Solid State Inc.DIODE GEN PURP 400V 40A DO5
1N1186AGeneSiC SemiconductorDIODE GEN PURP 200V 40A DO51N1187Solid State Inc.DIODE GEN PURP 300V 40A DO51N1186CIRIGBT Module1N1186ARMicrochip TechnologySTANDARD RECTIFIER1N1186ASolid State Inc.DIODE GEN PURP 12A DO41N1186RASolid State Inc.DIODE GEN PURP REV 12A DO41N1187Microchip TechnologySTANDARD RECTIFIER1N1187GeneSiC SemiconductorDIODE GEN PURP 300V 35A DO51N1186AMicrochip TechnologySTANDARD RECTIFIER1N1186GeneSiC SemiconductorDIODE GEN PURP 200V 35A DO51N1187RGeneSiC SemiconductorDIODE GEN PURP REV 300V 35A DO51N1187RSolid State Inc.DIODE GEN PURP REV 300V 40A DO51N1186ARGeneSiC SemiconductorDIODE GEN PURP REV 200V 40A DO51N1186RSolid State Inc.DIODE GEN PURP REV 200V 40A DO51N1186RMicrochip TechnologySTANDARD RECTIFIER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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