PMV31XN,215 Tech Spezifikatioune
NXP USA Inc. - PMV31XN,215 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMV31XN,215
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 1.5V @ 1mA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23 (TO-236AB) | |
Serie | TrenchMOS™ | |
Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V | |
Power Dissipation (Max) | 280mW (Tj) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Tc) | |
Basis Produktnummer | PMV3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMV31XN,215.
Produktiounsattriff | ||||
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Part Number | PMV31XN,215 | PMV30XPEAR | PMV33UPE,215 | PMV30UN2R |
Hiersteller | NXP USA Inc. | Nexperia USA Inc. | NXP Semiconductors | Nexperia USA Inc. |
Vgs (Max) | ±12V | ±12V | ±8V | ±12V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 4.5 V | 17 nC @ 4.5 V | 22.1 nC @ 4.5 V | 11 nC @ 4.5 V |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation (Max) | 280mW (Tj) | 490mW (Ta), 5.435W (Tc) | 490mW (Ta) | 490mW (Ta), 5W (Tc) |
Basis Produktnummer | PMV3 | PMV30 | - | PMV30 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Tc) | 4.5A (Ta) | 4.4A (Ta) | 4.2A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V | 34mOhm @ 3A, 4.5V | 36mOhm @ 3A, 4.5V | 32mOhm @ 4.2A, 4.5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 1.5V @ 1mA | 1.25V @ 250µA | 950mV @ 250µA | 900mV @ 250µA |
Supplier Device Package | SOT-23 (TO-236AB) | TO-236AB | SOT-23 | TO-236AB |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 20 V | 1465 pF @ 10 V | 1820 pF @ 10 V | 655 pF @ 10 V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V | 1.2V, 4.5V |
Serie | TrenchMOS™ | Automotive, AEC-Q101 | - | - |
Eroflueden PMV31XN,215 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir PMV31XN,215 - NXP USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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