PMPB23XNEZ Tech Spezifikatioune
NXP Semiconductors - PMPB23XNEZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP Semiconductors - PMPB23XNEZ
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 900mV @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DFN2020MD-6 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 4.5V | |
Power Dissipation (Max) | 1.7W (Ta) | |
Package / Case | 6-UDFN Exposed Pad | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1136 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP Semiconductors PMPB23XNEZ.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PMPB23XNEZ | PMPB29XPEAX | PMPB23XNEZ | PMPB20EN,115 |
Hiersteller | NXP Semiconductors | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
Vgs (Max) | ±12V | ±12V | ±12V | ±20V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 1.7W (Ta) | 1.7W (Ta), 12.5W (Tc) | 1.7W (Ta) | 1.7W (Ta), 12.5W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1136 pF @ 10 V | 2970 pF @ 10 V | 1136 pF @ 10 V | 435 pF @ 10 V |
Package / Case | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 30 V |
Vgs (th) (Max) @ Id | 900mV @ 250µA | 1V @ 250µA | 900mV @ 250µA | 2V @ 250µA |
Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 4.5V | 32.5mOhm @ 5A, 4.5V | 22mOhm @ 7A, 4.5V | 19.5mOhm @ 7A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta) | 5A (Ta) | 7A (Ta) | 7.2A (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V | 4.5V, 10V |
Serie | - | Automotive, AEC-Q101, TrenchMOS™ | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | DFN2020MD-6 | DFN2020MD-6 | DFN2020MD-6 | DFN2020MD-6 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | 45 nC @ 4.5 V | 17 nC @ 10 V | 10.8 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden PMPB23XNEZ PDF DataDhusts an NXP Semiconductors Dokumentatioun fir PMPB23XNEZ - NXP Semiconductors.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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