PMN20EN,115 Tech Spezifikatioune
NXP USA Inc. - PMN20EN,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMN20EN,115
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-74 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 6.7A, 10V | |
Power Dissipation (Max) | 545mW (Ta) | |
Package / Case | SC-74, SOT-457 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Tj) | |
Basis Produktnummer | PMN2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMN20EN,115.
Produktiounsattriff | ||||
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Part Number | PMN20EN,115 | PMN25EN,115 | PMN120ENEX | PMN25UN,115 |
Hiersteller | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V | 11 nC @ 10 V | 7.4 nC @ 10 V | 10 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 15 V | 492 pF @ 15 V | 275 pF @ 30 V | 470 pF @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Tj) | 6.2A (Ta) | 3.1A (Ta) | 6A (Ta) |
Rds On (Max) @ Id, Vgs | 20mOhm @ 6.7A, 10V | 23mOhm @ 6.2A, 10V | 123mOhm @ 2.4A, 10V | 27mOhm @ 6A, 4.5V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | PMN2 | PMN2 | - | PMN2 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Supplier Device Package | SC-74 | SC-74 | 6-TSOP | SC-74 |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 60 V | 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.7V @ 250µA | 1V @ 250µA |
Package / Case | SC-74, SOT-457 | SC-74, SOT-457 | SC-74, SOT-457 | SC-74, SOT-457 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V |
Vgs (Max) | ±20V | ±20V | ±20V | ±8V |
Power Dissipation (Max) | 545mW (Ta) | 540mW (Ta), 6.25W (Tc) | 1.4W (Ta), 6.25W (Tc) | 530mW (Ta), 6.25W (Tc) |
Eroflueden PMN20EN,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir PMN20EN,115 - NXP USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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