PMGD8000LN,115 Tech Spezifikatioune
NXP USA Inc. - PMGD8000LN,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMGD8000LN,115
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NXP Semiconductors | |
| Vgs (th) (Max) @ Id | 1.5V @ 100µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSSOP | |
| Serie | TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V | |
| Power - Max | 200mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 125mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | PMGD8 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMGD8000LN,115.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PMGD8000LN,115 | PMGD370XN,115 | PMGD290UCEAX | PMGD780SN,115 |
| Hiersteller | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 125mA | 740mA | 725mA, 500mA | 490mA |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V | 440mOhm @ 200mA, 4.5V | 380mOhm @ 500mA, 4.5V | 920mOhm @ 300mA, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 6-TSSOP | 6-TSSOP | 6-TSSOP | 6-TSSOP |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 20V | 60V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | TrenchMOS™ | TrenchMOS™ | Automotive, AEC-Q100 | TrenchMOS™ |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V | 37pF @ 25V | 83pF @ 10V | 23pF @ 30V |
| Basis Produktnummer | PMGD8 | PMGD370 | PMGD290 | PMGD780 |
| Power - Max | 200mW | 410mW | 280mW | 410mW |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | N and P-Channel | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V | 0.65nC @ 4.5V | 0.68nC @ 4.5V | 1.05nC @ 10V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Vgs (th) (Max) @ Id | 1.5V @ 100µA | 1.5V @ 250µA | 1.3V @ 250µA | 2.5V @ 250µA |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
Eroflueden PMGD8000LN,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir PMGD8000LN,115 - NXP USA Inc..
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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