PMDPB80XP,115 Tech Spezifikatioune
NXP USA Inc. - PMDPB80XP,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMDPB80XP,115
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NXP Semiconductors | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-HUSON (2x2) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V | |
| Power - Max | 485mW | |
| Package / Case | 6-UFDFN Exposed Pad | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V | |
| FET Feature | Logic Level Gate, 1.8V Drive | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.7A | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | PMDPB80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMDPB80XP,115.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PMDPB80XP,115 | PMDPB70EN,115 | PMDT290UNE,115 | PMDPB70EN,115 |
| Hiersteller | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
| Power - Max | 485mW | 510mW | 500mW | 510mW |
| Konfiguratioun | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Supplier Device Package | 6-HUSON (2x2) | 6-HUSON (2x2) | SOT-666 | 6-HUSON (2x2) |
| FET Feature | Logic Level Gate, 1.8V Drive | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 2.5V @ 250µA | 950mV @ 250µA | 2.5V @ 250µA |
| Basis Produktnummer | PMDPB80 | PMDPB70 | PMDT290 | PMDPB70 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.7A | 3.5A | 800mA | 3.5A |
| Package / Case | 6-UFDFN Exposed Pad | 6-UFDFN Exposed Pad | SOT-563, SOT-666 | 6-UFDFN Exposed Pad |
| Serie | - | - | Automotive, AEC-Q101, TrenchMOS™ | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V | 57mOhm @ 3.5A, 10V | 380mOhm @ 500mA, 4.5V | 57mOhm @ 3.5A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V | 4.5nC @ 10V | 0.68nC @ 4.5V | 4.5nC @ 10V |
| Entworf fir Source Voltage (Vdss) | 20V | 30V | 20V | 30V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V | 130pF @ 15V | 83pF @ 10V | 130pF @ 15V |
PMDPB70ENNexperiaPMDPB70XP,115NexperiaPMDPB70XPNEXPPMDT290UNE115NXP SemiconductorsPMDPB70EN,115Nexperia USA Inc.MOSFET 2N-CH 30V 3.5A 6DFNPMDPB70XP+115Freescale / NXP SemiconductorsPMDT670UPEFreescale / NXP SemiconductorsPMDT290UNE,115Nexperia USA Inc.MOSFET 2N-CH 20V 0.8A SOT666PMDT670UPE115NexperiaPMDT290UNENexperiaPMDPB70EN,115NXP USA Inc.PMDPB70EN - SMALL SIGNAL, HUSON6PMDPB95XNE.115NexperiaPMDPB70XPE115NXP SemiconductorsPMDPB70XPENXP SemiconductorsPMDPB80XPNexperiaPMDXB550UNEFreescale / NXP SemiconductorsPMDT290UCEFreescale / NXP SemiconductorsPMDPB80XP,115Nexperia USA Inc.MOSFET 2P-CH 20V 2.7A 6HUSON| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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