PDTC123YE,115 Tech Spezifikatioune
NXP Semiconductors / Freescale - PDTC123YE,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP Semiconductors / Freescale - PDTC123YE,115
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | NXP Semiconductors | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
Transistor Type | NPN - Pre-Biased | |
Supplier Device Package | SC-75 | |
Serie | - | |
Resistor - Emitterbasis (R2) | 10 kOhms | |
Resistor - Base (R1) | 2.2 kOhms | |
Power - Max | 150mW | |
Verpakung | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SC-75, SOT-416 | |
Aner Names | 934058807115 PDTC123YE T/R PDTC123YE T/R-ND |
|
Mounting Type | Surface Mount | |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | |
Detailbeschreiwung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 | |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V | |
Aktuell - Kollektorat Cutoff (Max) | 1µA | |
Aktuell - Sammler (Ic) (Max) | 100mA | |
Basiszuel Nummer | PDTC123 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PDTC123YE,115 | PDTC123TU115 | PDTC123TT,215 | PDTC123TT,215 |
Hiersteller | NXP Semiconductors / Freescale | NXP Semiconductors | NXP USA Inc. | Nexperia USA Inc. |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V | - | 30 @ 20mA, 5V | 30 @ 20mA, 5V |
Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
Aktuell - Sammler (Ic) (Max) | 100mA | - | 100 mA | 100 mA |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | - | - | - |
Serie | - | * | - | - |
Aner Names | 934058807115 PDTC123YE T/R PDTC123YE T/R-ND |
- | - | - |
Detailbeschreiwung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 | - | - | - |
Resistor - Emitterbasis (R2) | 10 kOhms | - | - | - |
Supplier Device Package | SC-75 | - | SOT-23 | TO-236AB |
Voltage - Collector Emitter Breakdown (Max) | 50V | - | 50 V | 50 V |
Verpakung | Tape & Reel (TR) | - | - | - |
Aktuell - Kollektorat Cutoff (Max) | 1µA | - | 1µA | 1µA |
Resistor - Base (R1) | 2.2 kOhms | - | 2.2 kOhms | 2.2 kOhms |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | - | - | - |
Transistor Type | NPN - Pre-Biased | - | NPN - Pre-Biased | NPN - Pre-Biased |
Basiszuel Nummer | PDTC123 | - | - | - |
Power - Max | 150mW | - | 250 mW | 250 mW |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | - | 150mV @ 500µA, 10mA | 150mV @ 500µA, 10mA |
Package / Case | SC-75, SOT-416 | - | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Eroflueden PDTC123YE,115 PDF DataDhusts an NXP Semiconductors / Freescale Dokumentatioun fir PDTC123YE,115 - NXP Semiconductors / Freescale.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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