BUK9Y6R0-60E,115 Tech Spezifikatioune
NXP USA Inc. - BUK9Y6R0-60E,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - BUK9Y6R0-60E,115
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 2.1V @ 1mA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK56, Power-SO8 | |
Serie | Automotive, AEC-Q101, TrenchMOS™ | |
Rds On (Max) @ Id, Vgs | 5.2mOhm @ 25A, 10V | |
Power Dissipation (Max) | 195W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6319 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 39.4 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. BUK9Y6R0-60E,115.
Produktiounsattriff | ||||
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Part Number | BUK9Y6R0-60E,115 | BUK9Y6R0-60E,115 | BUK9Y59-60E,115 | BUK9Y59-60E,115 |
Hiersteller | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
Input Capacitance (Ciss) (Max) @ Vds | 6319 pF @ 25 V | 6319 pF @ 25 V | 715 pF @ 25 V | 715 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 39.4 nC @ 5 V | 39.4 nC @ 5 V | 6.1 nC @ 5 V | 6.1 nC @ 5 V |
Vgs (th) (Max) @ Id | 2.1V @ 1mA | 2.1V @ 1mA | 2.1V @ 1mA | 2.1V @ 1mA |
Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 |
Serie | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ |
Vgs (Max) | ±10V | ±10V | ±10V | ±10V |
Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 100A (Tc) | 16.7A (Tc) | 16.7A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 5V | 5V | 5V | 5V |
Rds On (Max) @ Id, Vgs | 5.2mOhm @ 25A, 10V | 5.2mOhm @ 25A, 10V | 52mOhm @ 5A, 10V | 52mOhm @ 5A, 10V |
Power Dissipation (Max) | 195W (Tc) | 195W (Tc) | 37W (Tc) | 37W (Tc) |
Eroflueden BUK9Y6R0-60E,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir BUK9Y6R0-60E,115 - NXP USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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