BUK9Y22-30B,115 Tech Spezifikatioune
NXP USA Inc. - BUK9Y22-30B,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - BUK9Y22-30B,115
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 2V @ 1mA | |
Vgs (Max) | ±15V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK56, Power-SO8 | |
Serie | Automotive, AEC-Q101, TrenchMOS™ | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V | |
Power Dissipation (Max) | 59.4W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.7A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. BUK9Y22-30B,115.
Produktiounsattriff | ||||
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Part Number | BUK9Y22-30B,115 | BUK9Y1R3-40HX | BUK9Y19-75B,115 | BUK9Y22-30B,115 |
Hiersteller | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
FET Typ | N-Channel | - | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | - | 5V, 10V | 5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.7A (Tc) | 190A (Tj) | 48.2A (Tc) | 37.7A (Tc) |
Package / Case | SC-100, SOT-669 | - | SC-100, SOT-669 | SC-100, SOT-669 |
Power Dissipation (Max) | 59.4W (Tc) | - | 106W (Tc) | 59.4W (Tc) |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V | - | 18mOhm @ 20A, 10V | 19mOhm @ 20A, 10V |
Serie | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q100 | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ |
Supplier Device Package | LFPAK56, Power-SO8 | - | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 |
Vgs (Max) | ±15V | +16V, -10V | ±15V | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V | - | 3096 pF @ 25 V | 940 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 30 V | - | 75 V | 30 V |
Vgs (th) (Max) @ Id | 2V @ 1mA | - | 2.15V @ 1mA | 2V @ 1mA |
Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 5 V | - | 30 nC @ 5 V | 10.5 nC @ 5 V |
Eroflueden BUK9Y22-30B,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir BUK9Y22-30B,115 - NXP USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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