BUK6213-30A,118 Tech Spezifikatioune
NXP USA Inc. - BUK6213-30A,118 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - BUK6213-30A,118
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NXP Semiconductors | |
| Vgs (th) (Max) @ Id | 3V @ 1mA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK | |
| Serie | Automotive, AEC-Q101, TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 102W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1986 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. BUK6213-30A,118.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BUK6213-30A,118 | BUK6217-55C | BUK6213-30A,118 | BUK6209-30C |
| Hiersteller | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
| FET Feature | - | - | - | - |
| Serie | Automotive, AEC-Q101, TrenchMOS™ | * | Automotive, AEC-Q101, TrenchMOS™ | * |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V | - | 13mOhm @ 10A, 10V | - |
| Mounting Type | Surface Mount | - | Surface Mount | - |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | - | 44 nC @ 10 V | - |
| FET Typ | N-Channel | - | N-Channel | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | - |
| Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | - | 55A (Tc) | - |
| Vgs (th) (Max) @ Id | 3V @ 1mA | - | 3V @ 1mA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1986 pF @ 25 V | - | 1986 pF @ 25 V | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | - |
| Vgs (Max) | ±16V | - | ±16V | - |
| Supplier Device Package | DPAK | - | DPAK | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | - |
| Power Dissipation (Max) | 102W (Tc) | - | 102W (Tc) | - |
| Entworf fir Source Voltage (Vdss) | 30 V | - | 30 V | - |
Eroflueden BUK6213-30A,118 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir BUK6213-30A,118 - NXP USA Inc..
BUK6207-30CFreescale / NXP SemiconductorsBUK6217-55CNexperia USA Inc.PFET, 44A I(D), 55V, 0.0285OHM,BUK6216-40CFreescale / NXP SemiconductorsBUK6208-40CVBSEMIBUK6215-75C MOSFreescale / NXP SemiconductorsBUK6210-55CFreescale / NXP SemiconductorsBUK6212-40CFreescale / NXP SemiconductorsBUK6207-55CVBSEMIBUK6226-75CFreescale / NXP Semiconductors
BUK617-500BELUMILEDSIGBT ModuleBUK6211-75CFreescale / NXP SemiconductorsBUK6213-30A,118Nexperia USA Inc.MOSFET N-CH 30V 55A DPAKBUK6213-30AFreescale / NXP SemiconductorsBUK6213-30CFreescale / NXP SemiconductorsBUK6215-75CFreescale / NXP SemiconductorsBUK6209-30CNXP USA Inc.PFET, 50A I(D), 30V, 0.0192OHM,BUK6218-40CNXP USA Inc.PFET, 42A I(D), 40V, 0.028OHM, 1BUK6213-30C MOSFreescale / NXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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