SI4532DY Tech Spezifikatioune
Fairchild Semiconductor - SI4532DY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - SI4532DY
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.9A, 10V | |
| Power - Max | 900mW | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A, 3.5A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SI4532 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor SI4532DY.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | SI4532DY | SI4532CDY-T1-GE3 | SI4532ADY-T1-E3 | SI4532DY |
| Hiersteller | Fairchild Semiconductor | Vishay Siliconix | Vishay Siliconix | onsemi |
| FET Feature | - | - | Logic Level Gate | - |
| Serie | - | TrenchFET® | TrenchFET® | - |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 1V @ 250µA (Min) | 3V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | SI4532 | SI4532 | SI4532 | SI4532 |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 10V | 305pF @ 15V | - | 235pF @ 10V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | 9nC @ 10V | 16nC @ 10V | 15nC @ 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Power - Max | 900mW | 2.78W | 1.13W, 1.2W | 900mW |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.9A, 10V | 47mOhm @ 3.5A, 10V | 53mOhm @ 4.9A, 10V | 65mOhm @ 3.9A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A, 3.5A | 6A, 4.3A | 3.7A, 3A | 3.9A, 3.5A |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
SI4532CDY-T1-GE3Vishay SiliconixMOSFET N/P-CH 30V 6A 8-SOICSI4532ADY-T1-E3Vishay SiliconixMOSFET N/P-CH 30V 3.7A 8-SOIC
SI4532DY-T1-E3Electro-Films (EFI) / VishaySI4532ADYElectro-Films (EFI) / VishaySI4532DY MOSElectro-Films (EFI) / VishaySI4532DYonsemiMOSFET N/P-CH 30V 3.9/3.5A 8SOICSI4532DY-T1SILICONIXSI4532DY-NLVBSEMISi4532CDYElectro-Films (EFI) / VishaySI4532ADY-T1Electro-Films (EFI) / VishaySI4532AEY-T1-E3VBSEMI
SI4532DY.Fairchild (onsemi)SI4532DY-T1-GE3.Fairchild (onsemi)SI4532ADY-T1-E3 MOSElectro-Films (EFI) / VishaySi4532CDY-T1-E3Electro-Films (EFI) / VishaySi4532DY-T1-GE3Electro-Films (EFI) / VishaySI4532DY-NL.Fairchild (onsemi)Si4532CDY-T1-GE3 MOSElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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