SSP2N60B Tech Spezifikatioune
Fairchild Semiconductor - SSP2N60B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - SSP2N60B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V | |
| Power Dissipation (Max) | 54W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor SSP2N60B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SSP2N60B | SSP3N80A | SSP35N03 | SSP2N90 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | SEC | SEC |
| Package protegéieren | Bulk | Bulk | - | - |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V | 4.8Ohm @ 850mA, 10V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3.5V @ 250µA | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 35 nC @ 10 V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V | 750 pF @ 25 V | - | - |
| Supplier Device Package | TO-220 | TO-220 | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Mounting Type | Through Hole | Through Hole | - | - |
| Serie | - | - | - | - |
| Package / Case | TO-220-3 | TO-220-3 | - | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 600 V | 800 V | - | - |
| Vgs (Max) | ±30V | ±30V | - | - |
| Power Dissipation (Max) | 54W (Tc) | 100W (Tc) | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 3A (Tc) | - | - |
SSP35N03SECSSP2N90SECSSP33167FV60R2MOTOROLASSP29604VFR2MOTSSP3N60Fairchild (onsemi)SSP32002FE60MOTOROLA
SSP26111VF160AFreescale / NXP SemiconductorsSSP4060NSSSSSP26811FU100Freescale / NXP SemiconductorsSSP26812FU100HDCDSSP2N90AFairchild (onsemi)SSP3N80AFairchild SemiconductorN-CHANNEL POWER MOSFETSSP3N90AFairchild (onsemi)SSP29703GCMOTOROLASSP2N60VBsemiSSP26905AG120Freescale / NXP SemiconductorsSSP26102VF80ASSP26102VF80AB1MOTOROLA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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