SI4936DY Tech Spezifikatioune
Fairchild Semiconductor - SI4936DY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - SI4936DY
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 37mOhm @ 5.8A, 10V | |
Power - Max | 900mW (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Ta) | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | SI4936 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor SI4936DY.
Produktiounsattriff | ||||
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Part Number | SI4936DY | SI4936CDY-T1-GE3 | SI4940DY-T1-E3 | SI4936BDY-T1-GE3 |
Hiersteller | Fairchild Semiconductor | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 37mOhm @ 5.8A, 10V | 40mOhm @ 5A, 10V | 36mOhm @ 5.7A, 10V | 35mOhm @ 5.9A, 10V |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 40V | 30V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Serie | - | TrenchFET® | TrenchFET® | TrenchFET® |
Vgs (th) (Max) @ Id | 1V @ 250µA | 3V @ 250µA | 1V @ 250µA (Min) | 3V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Power - Max | 900mW (Ta) | 2.3W | 1.1W | 2.8W |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Ta) | 5.8A | 4.2A | 6.9A |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V | 325pF @ 15V | - | 530pF @ 15V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
FET Feature | - | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Basis Produktnummer | SI4936 | SI4936 | SI4940 | SI4936 |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | 9nC @ 10V | 14nC @ 10V | 15nC @ 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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