RF1S50N06SM9A Tech Spezifikatioune
Fairchild Semiconductor - RF1S50N06SM9A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - RF1S50N06SM9A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-263AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 131W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor RF1S50N06SM9A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RF1S50N06SM9A | RF1S4N100SM9A | RF1S70N03 | RF1S630SM9A |
| Hiersteller | Fairchild Semiconductor | Harris Corporation | Harris Corporation | Harris Corporation |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 131W (Tc) | 150W (Tc) | 150W (Tc) | 75W (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 50A, 10V | 3.5Ohm @ 2.5A, 10V | 10mOhm @ 70A, 10V | 400mOhm @ 5A, 10V |
| Supplier Device Package | TO-263AB | TO-263AB | TO-262AA | TO-263AB |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | - | 3300 pF @ 25 V | 600 pF @ 25 V |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 1000 V | 30 V | 200 V |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V | - | 260 nC @ 20 V | 30 nC @ 10 V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 4.3A (Tc) | 70A (Tc) | 6A (Tc) |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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