RF1K4909096 Tech Spezifikatioune
Fairchild Semiconductor - RF1K4909096 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - RF1K4909096
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.5A, 5V | |
| Power - Max | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 12V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | RF1K4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor RF1K4909096.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RF1K4909096 | RF1K4909396 | RF1K49092 | RF1K4908696136 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | HARRIS |
| Entworf fir Source Voltage (Vdss) | 12V | 12V | 12V | - |
| Power - Max | 2W (Ta) | 2W (Ta) | 2W (Ta) | - |
| Serie | - | LittleFET™ | LittleFET™ | - |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | - |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | N and P-Channel | - |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 10V | 775pF @ 10V | 750pF @ 10V, 775pF @ 10V | - |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | 24nC @ 10V | 25nC @ 10V, 24nC @ 10V | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 2.5A (Ta) | 3.5A (Ta), 2.5A (Ta) | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| FET Feature | Logic Level Gate | Logic Level Gate | - | - |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.5A, 5V | 130mOhm @ 2.5A, 5V | 50mOhm @ 3.5A, 5V, 130mOhm @ 2.5A, 5V | - |
| Package protegéieren | Bulk | Bulk | Bulk | - |
| Basis Produktnummer | RF1K4 | RF1K4 | RF1K4 | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | - |
RF1K4908696136HARRISRF1K4909396Harris CorporationRF1K4909396 - POWER FIELD-EFFECTRF1K49090Fairchild (onsemi)RF1K49086Fairchild (onsemi)RF1K4908896HARRISRF1K4909396Fairchild SemiconductorP-CHANNEL POWER MOSFET
RF1K4909396 MOSIntersil (Renesas Electronics Corporation)RF1K4909096Harris CorporationRF1K4909096 - POWER FIELD-EFFECTRF1K49154 MOSFairchild (onsemi)RF1K49088Fairchild (onsemi)RF1891TR13-5KQORVO
RF1940-000Hamlin / LittelfuseRF1K49211Harris CorporationN-CHANNEL POWER MOSFETRF1K49086 MOSFairchild (onsemi)RF1K49157Fairchild SemiconductorN-CHANNEL POWER MOSFETRF1K49093Intersil (Renesas Electronics Corporation)RF1K49092Fairchild SemiconductorP-CHANNEL POWER MOSFETRF1K49154Intersil (Renesas Electronics Corporation)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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