NDS8858H Tech Spezifikatioune
Fairchild Semiconductor - NDS8858H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - NDS8858H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 2.8V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 10V | |
| Power - Max | 1W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.3A, 4.8A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | NDS885 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor NDS8858H.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NDS8858H | NDS8934 | NDS8852H | NDS8858H |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 30V | 20V | 30V | 30V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 10V | 70mOhm @ 3.8A, 4.5V | 80mOhm @ 3.4A, 10V | 35mOhm @ 4.8A, 10V |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.3A, 4.8A | 3.8A | 4.3A, 3.4A | 6.3A, 4.8A |
| Vgs (th) (Max) @ Id | 2.8V @ 250µA | 1V @ 250µA | 2.8V @ 250µA | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | 30nC @ 4.5V | 25nC @ 10V | 30nC @ 10V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V | 1120pF @ 10V | 300pF @ 15V | 720pF @ 15V |
| Konfiguratioun | N and P-Channel | 2 P-Channel (Dual) | N and P-Channel | N and P-Channel |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 1W | 900mW | 1W | 1W |
| Basis Produktnummer | NDS885 | NDS893 | NDS885 | NDS885 |
NDS8839H-NLVBSEMINDS8934onsemiMOSFET 2P-CH 20V 3.8A 8-SOICNDS8852HonsemiMOSFET N/P-CH 30V 8SOIC
NDS8926-NLFairchild (onsemi)NDS8858H-NLWDJNDS8858H MOSFairchild (onsemi)NDS8839H_NLFairchild (onsemi)NDS8435ANLFairchild (onsemi)NDS8858HonsemiMOSFET N/P-CH 30V 8SOICNDS8435A_NLFairchild (onsemi)NDS8926A-NLFairchild (onsemi)NDS8858Fairchild (onsemi)NDS8852H-NLFairchild (onsemi)NDS8839HFairchild (onsemi)NDS8926onsemiMOSFET DUAL N-CH 20V 8-SONDS8934Fairchild SemiconductorP-CHANNEL POWER MOSFETNDS8928-NLVBSEMINDS8928Fairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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