MBRD835LG Tech Spezifikatioune
Fairchild Semiconductor - MBRD835LG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - MBRD835LG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 510 mV @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 35 V | |
| Technologie | Schottky | |
| Supplier Device Package | DPAK | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | SWITCHMODE™ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 1.4 mA @ 35 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor MBRD835LG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MBRD835LG | MBRD835 | MBRD835LG | MBRD835L |
| Hiersteller | Fairchild Semiconductor | SMC Diode Solutions | onsemi | onsemi |
| Capacitance @ Vr, F. | - | 600pF @ 4V, 1MHz | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | SWITCHMODE™ | - | SWITCHMODE™ | SWITCHMODE™ |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | - | 8A | 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 1.4 mA @ 35 V | 1.4 mA @ 35 V | 1.4 mA @ 35 V | 1.4 mA @ 35 V |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tube | Tube |
| Voltage - Viru (Vf) (Max) @ Wann | 510 mV @ 8 A | 510 mV @ 8 A | 510 mV @ 8 A | 510 mV @ 8 A |
| Voltage - DC Reverse (Vr) (Max) | 35 V | 35 V | 35 V | 35 V |
MBRD835L MOSAMI Semiconductor/onsemiMBRD660LT4GAMI Semiconductor/onsemiMBRD835SMC Diode SolutionsDIODE SCHOTTKY 35V DPAKMBRD835LGonsemiDIODE SCHOTTKY 35V 8A DPAKMBRD835-G-T4SSMBRF10100CMOSPECMBRD660LT1GAMI Semiconductor/onsemiMBRD835LonsemiDIODE SCHOTTKY 35V 8A DPAKMBRD835LT4 MOSAMI Semiconductor/onsemi
MBRF10100SMC Diode SolutionsDIODE SCHOTTKY 100V ITO220ACMBRD835LT4GonsemiDIODE SCHOTTKY 35V 8A DPAKMBRD835LT4G.AMI Semiconductor/onsemiMBRD835LTAMI Semiconductor/onsemiMBRD835L-T4AMI Semiconductor/onsemiMBRD6U60CT-RTF/HKECMBRD835LT4onsemiDIODE SCHOTTKY 35V 8A DPAK
MBRF10100Taiwan Semiconductor CorporationDIODE SCHOTTKY 100V 10A ITO220AC
MBRD835L-TDiodes IncorporatedDIODE SCHOTTKY 35V 8A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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