ISL9R30120G2 Tech Spezifikatioune
Fairchild Semiconductor - ISL9R30120G2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - ISL9R30120G2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 3.3 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 1.2 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-247-2 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Stealth™ | |
| Reverse Recovery Time (trr) | 100 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-247-2 | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 1.2 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 30A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor ISL9R30120G2.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | ISL9R30120G2 | ISL9R18120G2 | ISL9R3060P2 | ISL9R18120S3ST |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | onsemi |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 1.2 V | 100 µA @ 1200 V | 100 µA @ 600 V | 100 µA @ 1200 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Package / Case | TO-247-2 | TO-247-2 | TO-220-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Reverse Recovery Time (trr) | 100 ns | 70 ns | 45 ns | 300 ns |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 30A | 18A | 30A | 18A |
| Serie | Stealth™ | Stealth™ | Stealth™ | Stealth™ |
| Voltage - DC Reverse (Vr) (Max) | 1.2 V | 1200 V | 600 V | 1200 V |
| Package protegéieren | Bulk | Bulk | Tube | Tape & Reel (TR) |
| Supplier Device Package | TO-247-2 | TO-247-2 | TO-220-2 | D²PAK (TO-263) |
| Technologie | Standard | Standard | Standard | Standard |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 3.3 V @ 30 A | 3.3 V @ 18 A | 2.4 V @ 30 A | 3.3 V @ 18 A |
| Capacitance @ Vr, F. | - | - | - | - |
ISL9R18120G2Fairchild SemiconductorDIODE GEN PURP 1.2V 18A TO247-2ISL9R3060P2onsemiDIODE GEN PURP 600V 30A TO220-2ISL9R18120S3STonsemiDIODE GEN PURP 1.2KV 18A D2PAKISL9R3060P2/R3060P2Fairchild (onsemi)ISL9R18120G2onsemiDIODE GEN PURP 1.2KV 18A TO247-2ISL9R8120Fairchild (onsemi)ISL9R460PF2onsemiDIODE GEN PURP 600V 4A TO220F-2LISL9R1560S3STonsemiDIODE GEN PURP 600V 15A D2PAKISL9R18120P2onsemiDIODE GEN PURP 1.2KV 18A TO220-2ISL9R3060G2onsemiDIODE GEN PURP 600V 30A TO247-2ISL9R2480G2FSCISL9R1560S2Fairchild SemiconductorDIODE AVALANCHE 600V 15A I2PAKISL9R3060G2-F085onsemiDIODE GEN PURP 600V 30A TO247-2ISL9R1560S3SFairchild (onsemi)ISL9R30120G2onsemiDIODE GEN PURP 1.2KV 30A TO247-2ISL9R460PF2Fairchild SemiconductorDIODE GEN PURP 600V 4A TO220F-2LISL9R460P2onsemiDIODE GEN PURP 600V 4A TO220-2ISL9R18120S3SFairchild| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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