ISL9N306AS3ST Tech Spezifikatioune
Fairchild Semiconductor - ISL9N306AS3ST technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - ISL9N306AS3ST
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263AB | |
Serie | UltraFET® | |
Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V | |
Power Dissipation (Max) | 125W (Ta) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor ISL9N306AS3ST.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ISL9N306AS3ST | ISL9N303AS3ST | ISL9N304AP3 | ISL9N308AD3 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 172 nC @ 10 V | 105 nC @ 10 V | 68 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 75A (Tc) | 75A (Tc) | 50A (Tc) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | UltraFET® | UltraFET™ | UltraFET® | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Power Dissipation (Max) | 125W (Ta) | 215W (Tc) | 145W (Ta) | 100W (Tc) |
Supplier Device Package | TO-263AB | D²PAK (TO-263) | TO-220AB | I-PAK |
Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 15 V | 7000 pF @ 15 V | 4075 pF @ 15 V | 2600 pF @ 15 V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-251-3 Short Leads, IPak, TO-251AA |
Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V | 3.2mOhm @ 75A, 10V | 4.5mOhm @ 75A, 10V | 8mOhm @ 50A, 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.