IRFS654B Tech Spezifikatioune
Fairchild Semiconductor - IRFS654B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - IRFS654B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220F | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 10.5A, 10V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 250 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tj) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor IRFS654B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFS654B | IRFS720B | IRFS640A | IRFS634B_FP001 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V | 600 pF @ 25 V | 1500 pF @ 25 V | 1000 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) | 33W (Tc) | 43W (Tc) | 38W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package protegéieren | Bulk | Bulk | Bulk | Tube |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V | 18 nC @ 10 V | 58 nC @ 10 V | 38 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 250 V | 400 V | 200 V | 250 V |
| Supplier Device Package | TO-220F | TO-220F | TO-220F | TO-220F-3 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tj) | 3.3A (Tj) | 9.8A (Tc) | 8.1A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 10.5A, 10V | 1.75Ohm @ 1.65A, 10V | 180mOhm @ 4.9A, 10V | 450mOhm @ 4.05A, 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
IRFS654AFSCIRFS640BFairchild (onsemi)IRFS730Fairchild (onsemi)IRFS654BTFairchild (onsemi)IRFS720BFairchild SemiconductorN-CHANNEL POWER MOSFETIRFS640Fairchild (onsemi)IRFS640AFairchild SemiconductorN-CHANNEL POWER MOSFETIRFS720SECIRFS730AFairchild (onsemi)IRFS650BFairchild (onsemi)IRFS634B_FP001Fairchild SemiconductorMOSFET N-CH 250V 8.1A TO220FIRFS740BTFairchild (onsemi)IRFS644BFairchild (onsemi)IRFS740BFairchild SemiconductorN-CHANNEL POWER MOSFET
IRFS634B_FP001onsemiMOSFET N-CH 250V 8.1A TO220FIRFS730BFairchild SemiconductorN-CHANNEL POWER MOSFETIRFS740SECIRFS634BTFairchild SemiconductorTRANS MOSFET N-CH 250V 8.1A T/R| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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