IRFS540A Tech Spezifikatioune
Fairchild Semiconductor - IRFS540A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - IRFS540A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | - | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 8.5A, 10V | |
Power Dissipation (Max) | 39W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor IRFS540A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFS540A | IRFS540A | IRFS52N15DPBF | IRFS5620PBF |
Hiersteller | Fairchild Semiconductor | onsemi | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 17A (Tc) | 51A (Tc) | 24A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 100µA |
Serie | - | - | HEXFET® | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | 1710 pF @ 25 V | 2770 pF @ 25 V | 1710 pF @ 50 V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 8.5A, 10V | 52mOhm @ 8.5A, 10V | 32mOhm @ 36A, 10V | 77.5mOhm @ 15A, 10V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Power Dissipation (Max) | 39W (Tc) | 39W (Tc) | 3.8W (Ta), 230W (Tc) | 144W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 150 V | 200 V |
Vgs (Max) | - | ±20V | ±30V | ±20V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 78 nC @ 10 V | 89 nC @ 10 V | 38 nC @ 10 V |
Supplier Device Package | TO-220F-3 | TO-220F-3 | D2PAK | D2PAK |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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