HUFA75639S3ST Tech Spezifikatioune
Fairchild Semiconductor - HUFA75639S3ST technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HUFA75639S3ST
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263AB) | |
Serie | Automotive, AEC-Q101, UltraFET™ | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V | |
Power Dissipation (Max) | 200W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 56A (Tc) | |
Basis Produktnummer | HUFA75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HUFA75639S3ST.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUFA75639S3ST | HUFA75637P3 | HUFA75842S3S | HUFA75637P3 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Power Dissipation (Max) | 200W (Tc) | 155W (Tc) | 230W (Tc) | 155W (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 150 V | 100 V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 56A (Tc) | 44A (Tc) | 43A (Tc) | 44A (Tc) |
Basis Produktnummer | HUFA75 | HUFA75 | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V | 1700 pF @ 25 V | 2730 pF @ 25 V | 1700 pF @ 25 V |
Package protegéieren | Bulk | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V | 30mOhm @ 44A, 10V | 42mOhm @ 43A, 10V | 30mOhm @ 44A, 10V |
Supplier Device Package | D²PAK (TO-263AB) | TO-220-3 | D2PAK (TO-263) | TO-220-3 |
Serie | Automotive, AEC-Q101, UltraFET™ | UltraFET™ | UltraFET™ | UltraFET™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 108 nC @ 20 V | 175 nC @ 20 V | 108 nC @ 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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