HUF76619D3ST Tech Spezifikatioune
Fairchild Semiconductor - HUF76619D3ST technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HUF76619D3ST
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Serie | UltraFET™ | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V | |
| Power Dissipation (Max) | 75W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 767 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HUF76619D3ST.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HUF76619D3ST | HUF76619D3S | HUF76629D3ST | HUF76629D3S |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Harris Corporation |
| Power Dissipation (Max) | 75W (Tc) | 75W (Tc) | 110W (Tc) | 110W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 18A (Tc) | 20A (Tc) | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V | 85mOhm @ 18A, 10V | 52mOhm @ 20A, 10V | 52mOhm @ 20A, 10V |
| Serie | UltraFET™ | UltraFET™ | UltraFET™ | UltraFET™ |
| Package protegéieren | Bulk | Tube | Tape & Reel (TR) | Tube |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 767 pF @ 25 V | 767 pF @ 25 V | 1285 pF @ 25 V | 1285 pF @ 25 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 29 nC @ 10 V | 46 nC @ 10 V | 46 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Vgs (Max) | ±16V | ±16V | ±16V | ±16V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252AA | TO-252, (D-Pak) |
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HUF76629D3onsemiMOSFET N-CH 100V 20A IPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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