HUF75852G3 Tech Spezifikatioune
Fairchild Semiconductor - HUF75852G3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HUF75852G3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 75A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7690 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HUF75852G3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF75852G3 | HUF75925D3ST | HUF75939P3 | HUF75842S3ST |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
Rds On (Max) @ Id, Vgs | 16mOhm @ 75A, 10V | 275mOhm @ 11A, 10V | 125mOhm @ 22A, 10V | 42mOhm @ 43A, 10V |
FET Feature | - | - | - | - |
Serie | UltraFET™ | UltraFET™ | UltraFET™ | UltraFET™ |
Entworf fir Source Voltage (Vdss) | 150 V | 200 V | 200 V | 150 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 500W (Tc) | 100W (Tc) | 180W (Tc) | 230W (Tc) |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Package protegéieren | Bulk | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Supplier Device Package | TO-247 | TO-252AA | TO-220-3 | D²PAK (TO-263) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 7690 pF @ 25 V | 1030 pF @ 25 V | 2200 pF @ 25 V | 2730 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 11A (Tc) | 22A (Tc) | 43A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 20 V | 78 nC @ 20 V | 152 nC @ 20 V | 175 nC @ 20 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.