H11B1VM Tech Spezifikatioune
Fairchild Semiconductor - H11B1VM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - H11B1VM
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Ausgab (Max) | 30V | |
| Voltage - Isolatioun | 4170Vrms | |
| Voltage - Viru (Vf) (Typ) | 1.2V | |
| Vce Saturation (Max) | 1V | |
| Turn On / Aus Dreck Time (Typ) | 25µs, 18µs | |
| Supplier Device Package | 6-DIP | |
| Serie | - | |
| Rise / Fall Zäit (Typ) | - | |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Ausgängegkeet | Darlington with Base | |
| Operatioun Temperatur | -40°C ~ 100°C | |
| Zuel vu Channels | 1 | |
| Mounting Type | Through Hole | |
| Input Type | DC | |
| Aktuellt Transferverhältnis (Min) | 500% @ 1mA | |
| Aktuellt Transferverhältnis (Max) | - | |
| Aktuell - Ausgab / Kanal | 150mA | |
| Aktuell - DC Forward (Wann) (Max) | 80 mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor H11B1VM.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | H11B1VM | H11B255 | H11B1M | H11B1-X009T |
| Hiersteller | Fairchild Semiconductor | Everlight Electronics Co Ltd | onsemi | Vishay Semiconductor Opto Division |
| Package / Case | 6-DIP (0.300", 7.62mm) | 6-DIP (0.300', 7.62mm) | 6-DIP (0.300', 7.62mm) | 6-SMD, Gull Wing |
| Operatioun Temperatur | -40°C ~ 100°C | -55°C ~ 100°C | -40°C ~ 100°C | -55°C ~ 100°C |
| Supplier Device Package | 6-DIP | 6-DIP | 6-DIP | 6-SMD |
| Package protegéieren | Bulk | Tube | Tube | Tape & Reel (TR) |
| Ausgängegkeet | Darlington with Base | Darlington with Base | Darlington with Base | Darlington with Base |
| Aktuellt Transferverhältnis (Max) | - | - | - | - |
| Serie | - | - | - | - |
| Zuel vu Channels | 1 | 1 | 1 | 1 |
| Voltage - Isolatioun | 4170Vrms | 5000Vrms | 4170Vrms | 5300Vrms |
| Vce Saturation (Max) | 1V | 1V | 1V | 1V |
| Aktuellt Transferverhältnis (Min) | 500% @ 1mA | 100% @ 10mA | 500% @ 1mA | 500% @ 1mA |
| Voltage - Ausgab (Max) | 30V | 55V | 30V | 25V |
| Rise / Fall Zäit (Typ) | - | - | - | - |
| Aktuell - Ausgab / Kanal | 150mA | - | 150mA | 100mA |
| Voltage - Viru (Vf) (Typ) | 1.2V | 1.2V | 1.2V | 1.1V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Input Type | DC | DC | DC | DC |
| Turn On / Aus Dreck Time (Typ) | 25µs, 18µs | 25µs, 18µs | 25µs, 18µs | 5µs, 30µs |
| Aktuell - DC Forward (Wann) (Max) | 80 mA | 60 mA | 80 mA | 60 mA |
H11B255Everlight Electronics Co LtdOPTOISO 5KV DARL W/BASE 6DIPH11B1MonsemiOPTOISO 4.17KV DARL W/BASE 6DIP
H11B255VMAMI Semiconductor/onsemiH11B1-X009TVishay Semiconductor Opto DivisionOPTOISO 5.3KV DARL W/BASE 6SMD
H11B1S-040LFFairchild (onsemi)H11B3SMAMI Semiconductor/onsemiH11B2SMAMI Semiconductor/onsemi
H11B13SDonsemiOPTOISO 5.3KV DARL W/BASE 6SMDH11B2SR2MFairchild (onsemi)H11B1SR2MonsemiOPTOISO 4.17KV DARL W/BASE 6SMDH11B255SR2MAMI Semiconductor/onsemiH11B1SMonsemiOPTOISO 4.17KV DARL W/BASE 6SMDH11B3SR2MAMI Semiconductor/onsemiH11B255SMAMI Semiconductor/onsemiH11B1VMonsemiOPTOISO 4.17KV DARL W/BASE 6DIP
H11B1SMIsocom Components 2004 LTDOPTOISO 5.3KV DARL W/BASE 6SMD
H11B1MEverlight Electronics Co LtdOPTOISO 5KV DARL W/BASE 6DIPH11B255onsemiOPTOISO 5.3KV DARL W/BASE 6DIP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.