FQU1N60CTU Tech Spezifikatioune
Fairchild Semiconductor - FQU1N60CTU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQU1N60CTU
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQU1N60CTU.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQU1N60CTU | FQU1N80TU | FQU17P06TU | FQU1N80TU |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | 195 pF @ 25 V | 900 pF @ 25 V | 195 pF @ 25 V |
Supplier Device Package | I-PAK | I-PAK | I-PAK | I-PAK |
Serie | QFET® | QFET® | QFET® | QFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Tc) | 1A (Tc) | 12A (Tc) | 1A (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 800 V | 60 V | 800 V |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | 2.5W (Ta), 45W (Tc) | 2.5W (Ta), 44W (Tc) | 2.5W (Ta), 45W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V | 20Ohm @ 500mA, 10V | 135mOhm @ 6A, 10V | 20Ohm @ 500mA, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V | 7.2 nC @ 10 V | 27 nC @ 10 V | 7.2 nC @ 10 V |
Package protegéieren | Bulk | Bulk | Bulk | Tube |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden FQU1N60CTU PDF DataDhusts an Fairchild Semiconductor Dokumentatioun fir FQU1N60CTU - Fairchild Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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