FQT7N10LTF Tech Spezifikatioune
Fairchild Semiconductor - FQT7N10LTF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQT7N10LTF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-223-4 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 850mA, 10V | |
| Power Dissipation (Max) | 2W (Tc) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQT7N10LTF.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FQT7N10LTF | FQT4N25TF | FQT5P10TF | FQT7N10TF |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Tc) | 830mA (Tc) | 1A (Tc) | 1.7A (Tc) |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 850mA, 10V | 1.75Ohm @ 415mA, 10V | 1.05Ohm @ 500mA, 10V | 350mOhm @ 850mA, 10V |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 100 V | 250 V | 100 V | 100 V |
| Supplier Device Package | SOT-223-4 | SOT-223-4 | SOT-223-4 | SOT-223-4 |
| Vgs (Max) | ±20V | ±30V | ±30V | ±25V |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | 200 pF @ 25 V | 250 pF @ 25 V | 250 pF @ 25 V |
| Power Dissipation (Max) | 2W (Tc) | 2.5W (Tc) | 2W (Tc) | 2W (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V | 5.6 nC @ 10 V | 8.2 nC @ 10 V | 7.5 nC @ 10 V |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FQT7P06VBSEMIFQT7N10Fairchild (onsemi)IGBT Module
FQT5N20TFAMI Semiconductor/onsemiFQT5P10TF MOSFairchild (onsemi)FQT4N25TFFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 0FQT5P10TFFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FQT7N10TFonsemiMOSFET N-CH 100V 1.7A SOT223-4FQT7N10L TFFairchild (onsemi)FQT7N10TF MOSFairchild (onsemi)FQT5P10Fairchild (onsemi)FQT7N10LTF MOSFairchild (onsemi)FQT4N25TFonsemiMOSFET N-CH 250V 830MA SOT223-4FQT4N25TF MOSFairchild (onsemi)FQT4N25Fairchild (onsemi)FQT7N10LFairchild (onsemi)FQT7N10LTFonsemiMOSFET N-CH 100V 1.7A SOT223-4FQT5P10TFonsemiMOSFET P-CH 100V 1A SOT223-4FQT4N20TFonsemiMOSFET N-CH 200V 850MA SOT223-4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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