FQPF5N15 Tech Spezifikatioune
Fairchild Semiconductor - FQPF5N15 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQPF5N15
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 2.1A, 10V | |
Power Dissipation (Max) | 32W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQPF5N15.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQPF5N15 | FQPF5N20 | FQPF4N90CT | FQPF50N06 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | 270 pF @ 25 V | 960 pF @ 25 V | 1540 pF @ 25 V |
Vgs (Max) | ±25V | ±30V | ±30V | ±25V |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | 7.5 nC @ 10 V | 22 nC @ 10 V | 41 nC @ 10 V |
Serie | QFET® | QFET® | QFET® | QFET® |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 150 V | 200 V | 900 V | 60 V |
Power Dissipation (Max) | 32W (Tc) | 32W (Tc) | 47W (Tc) | 47W (Tc) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Tc) | 3.5A (Tc) | 4A (Tc) | 31A (Tc) |
Rds On (Max) @ Id, Vgs | 800mOhm @ 2.1A, 10V | 1.2Ohm @ 1.75A, 10V | 4.2Ohm @ 2A, 10V | 22mOhm @ 15.5A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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