FQP7N80C Tech Spezifikatioune
Fairchild Semiconductor - FQP7N80C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP7N80C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V | |
| Power Dissipation (Max) | 167W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP7N80C.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FQP7N80C | FQP7N20 | FQP7N60 | FQP7P06 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V | 690mOhm @ 3.3A, 10V | 1Ohm @ 3.7A, 10V | 410mOhm @ 3.5A, 10V |
| Entworf fir Source Voltage (Vdss) | 800 V | 200 V | 600 V | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 10 nC @ 10 V | 38 nC @ 10 V | 8.2 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±25V |
| Power Dissipation (Max) | 167W (Tc) | 63W (Tc) | 142W (Tc) | 45W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) | 6.6A (Tc) | 7.4A (Tc) | 7A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | 400 pF @ 25 V | 1430 pF @ 25 V | 295 pF @ 25 V |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FQP7N20onsemiMOSFET N-CH 200V 6.6A TO220-3FQP7N60onsemiMOSFET N-CH 600V 7.4A TO220-3FQP7P06onsemiMOSFET P-CH 60V 7A TO220-3
FQP7N80C MOSFairchild (onsemi)FQP7N10onsemiMOSFET N-CH 100V 7.3A TO220-3FQP7N40onsemiMOSFET N-CH 400V 7A TO220-3FQP7N65ConsemiMOSFET N-CH 650V 7A TO220-3FQP7N65CFairchild SemiconductorMOSFET N-CH 650V 7A TO220-3FQP80N06Fairchild (onsemi)FQP7N80onsemiMOSFET N-CH 800V 6.6A TO220-3FQP7P20Fairchild SemiconductorMOSFET P-CH 200V 7.3A TO220-3FQP7P06 MOSFairchild (onsemi)FQP7N80Fairchild SemiconductorMOSFET N-CH 800V 6.6A TO220-3FQP7P06Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7FQP7N80ConsemiMOSFET N-CH 800V 6.6A TO220-3FQP80N08Fairchild (onsemi)FQP7P20onsemiMOSFET P-CH 200V 7.3A TO220-3FQP7N60CFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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