FQP6N50C Tech Spezifikatioune
Fairchild Semiconductor - FQP6N50C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP6N50C
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V | |
Power Dissipation (Max) | 98W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP6N50C.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQP6N50C | FQP6N50 | FQP6N80C | FQP6N60C |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V | 1.3Ohm @ 2.8A, 10V | 2.5Ohm @ 2.75A, 10V | 2Ohm @ 2.75A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 800 V | 600 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 22 nC @ 10 V | 30 nC @ 10 V | 20 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | 5.5A (Tc) | 5.5A (Tc) | 5.5A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Package protegéieren | Tube | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | 790 pF @ 25 V | 1310 pF @ 25 V | 810 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 98W (Tc) | 98W (Tc) | 158W (Tc) | 125W (Tc) |
Serie | QFET® | QFET® | QFET® | QFET® |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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