FQP4N80 Tech Spezifikatioune
Fairchild Semiconductor - FQP4N80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP4N80
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | |
| Power Dissipation (Max) | 130W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP4N80.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FQP4N80 | FQP4N90C | FQP4N90 | FQP4P40 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | 4.2Ohm @ 2A, 10V | 3.3Ohm @ 2.1A, 10V | 3.1Ohm @ 1.75A, 10V |
| FET Feature | - | - | - | - |
| Serie | QFET® | QFET® | QFET® | QFET® |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Bulk | Tube | Bulk | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | 960 pF @ 25 V | 1100 pF @ 25 V | 680 pF @ 25 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 800 V | 900 V | 900 V | 400 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | 4A (Tc) | 4.2A (Tc) | 3.5A (Tc) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 22 nC @ 10 V | 30 nC @ 10 V | 23 nC @ 10 V |
| Power Dissipation (Max) | 130W (Tc) | 140W (Tc) | 140W (Tc) | 85W (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FQP4N65CFairchild (onsemi)FQP4N90ConsemiMOSFET N-CH 900V 4A TO220-3FQP4N90onsemiMOSFET N-CH 900V 4.2A TO220-3FQP4N80CFairchild (onsemi)FQP4P40onsemiMOSFET P-CH 400V 3.5A TO220-3FQP4N20L MOSFairchild (onsemi)FQP4N20LonsemiMOSFET N-CH 200V 3.8A TO220-3FQP4N80onsemiMOSFET N-CH 800V 3.9A TO220-3FQP4N90Fairchild SemiconductorMOSFET N-CH 900V 4.2A TO220-3FQP4N25Fairchild SemiconductorMOSFET N-CH 250V 3.6A TO220-3FQP4P40 MOSFairchild (onsemi)FQP4N60onsemiMOSFET N-CH 600V 4.4A TO220-3FQP4N60CFairchild (onsemi)FQP50N06onsemiMOSFET N-CH 60V 50A TO220-3FQP4N50onsemiMOSFET N-CH 500V 3.4A TO220-3FQP4P25onsemiMOSFET P-CH 250V 4A TO220-3FQP4N25onsemiMOSFET N-CH 250V 3.6A TO220-3FQP4N60AJSM| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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