FQP2N80 Tech Spezifikatioune
Fairchild Semiconductor - FQP2N80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP2N80
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 1.2A, 10V | |
| Power Dissipation (Max) | 85W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.4A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP2N80.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FQP2N80 | FQP2N60C | FQP2N60 | FQP30N06L |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | - | 350 pF @ 25 V | 1040 pF @ 25 V |
| Supplier Device Package | TO-220-3 | - | TO-220-3 | TO-220-3 |
| Entworf fir Source Voltage (Vdss) | 800 V | - | 600 V | 60 V |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 1.2A, 10V | - | 4.7Ohm @ 1.2A, 10V | 35mOhm @ 16A, 10V |
| Vgs (Max) | ±30V | - | ±30V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 5V, 10V |
| Power Dissipation (Max) | 85W (Tc) | - | 64W (Tc) | 79W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.4A (Tc) | - | 2.4A (Tc) | 32A (Tc) |
| Package / Case | TO-220-3 | - | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | QFET® | * | QFET® | QFET® |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | - | N-Channel | N-Channel |
| Package protegéieren | Bulk | Bulk | Tube | Tube |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | - | 11 nC @ 10 V | 20 nC @ 5 V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | - | 4V @ 250µA | 2.5V @ 250µA |
| Mounting Type | Through Hole | - | Through Hole | Through Hole |
FQP27P06 MOSFairchild (onsemi)FQP2N60CFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2FQP30N06 MOSFairchild (onsemi)FQP2N60Fairchild SemiconductorMOSFET N-CH 600V 2.4A TO220-3FQP30N06LonsemiMOSFET N-CH 60V 32A TO220-3FQP2P25onsemiMOSFET P-CH 250V 2.3A TO220-3FQP27P06onsemiMOSFET P-CH 60V 27A TO220-3FQP2N60ConsemiMOSFET N-CH 600V 2A TO220-3FQP2N60onsemiMOSFET N-CH 600V 2.4A TO220-3FQP2N30onsemiMOSFET N-CH 300V 2.1A TO220-3FQP2N80onsemiMOSFET N-CH 800V 2.4A TO220-3FQP2N70FSCFQP2P40onsemiMOSFET P-CH 400V 2A TO220-3FQP2N90onsemiMOSFET N-CH 900V 2.2A TO220-3FQP30N06Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 3FQP2N40onsemiMOSFET N-CH 400V 1.8A TO220-3FQP30N06onsemiMOSFET N-CH 60V 30A TO220-3FQP2P25Fairchild SemiconductorMOSFET P-CH 250V 2.3A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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