FQL40N50 Tech Spezifikatioune
Fairchild Semiconductor - FQL40N50 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQL40N50
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | HPM F2 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 10V | |
Power Dissipation (Max) | 460W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQL40N50.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQL40N50 | SI7170DP-T1-GE3 | FQL40N50F | NTMTS0D7N06CLTXG |
Hiersteller | Fairchild Semiconductor | Vishay Siliconix | Fairchild Semiconductor | onsemi |
Supplier Device Package | HPM F2 | PowerPAK® SO-8 | HPM F2 | 8-DFNW (8.3x8.4) |
Serie | QFET® | TrenchFET® | FRFET® | - |
Vgs (th) (Max) @ Id | 5V @ 250µA | 2.6V @ 250µA | 5V @ 250µA | 2.5V @ 250µA |
Entworf fir Source Voltage (Vdss) | 500 V | 30 V | 500 V | 60 V |
Power Dissipation (Max) | 460W (Tc) | 5W (Ta), 48W (Tc) | 460W (Tc) | 5W (Ta), 294.6W (Tc) |
Package / Case | TO-264-3, TO-264AA | PowerPAK® SO-8 | TO-264-3, TO-264AA | 8-PowerTDFN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 40A (Tc) | 40A (Tc) | 62.2A (Ta), 477A (Tc) |
Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 10V | 3.4mOhm @ 15A, 10V | 110mOhm @ 20A, 10V | 0.68mOhm @ 50A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | 4355 pF @ 15 V | 7500 pF @ 25 V | 16200 pF @ 25 V |
Vgs (Max) | ±30V | ±20V | ±30V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | 100 nC @ 10 V | 200 nC @ 10 V | 225 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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