FQI3N30TU Tech Spezifikatioune
Fairchild Semiconductor - FQI3N30TU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQI3N30TU
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.6A, 10V | |
Power Dissipation (Max) | 3.13W (Ta), 55W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 300 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.2A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQI3N30TU.
Produktiounsattriff | ||||
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Part Number | FQI3N30TU | FQI4N20TU | FQI4N20TU | FQI3N90TU |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
Entworf fir Source Voltage (Vdss) | 300 V | 200 V | 200 V | 900 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | QFET® | QFET® | QFET® | QFET® |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.2A (Tc) | 3.6A (Tc) | 3.6A (Tc) | 3.6A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | 6.5 nC @ 10 V | 6.5 nC @ 10 V | 26 nC @ 10 V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.6A, 10V | 1.4Ohm @ 1.8A, 10V | 1.4Ohm @ 1.8A, 10V | 4.25Ohm @ 1.8A, 10V |
Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | 220 pF @ 25 V | 220 pF @ 25 V | 910 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Power Dissipation (Max) | 3.13W (Ta), 55W (Tc) | 3.13W (Ta), 45W (Tc) | 3.13W (Ta), 45W (Tc) | 3.13W (Ta), 130W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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