FQD24N08TF Tech Spezifikatioune
Fairchild Semiconductor - FQD24N08TF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQD24N08TF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 9.8A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19.6A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQD24N08TF.
Produktiounsattriff | ||||
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Part Number | FQD24N08TF | FQD20N06TM | FQD2N100TM | FQD20N06LTM |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 38W (Tc) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 38W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19.6A (Tc) | 16.8A (Tc) | 1.6A (Tc) | 17.2A (Tc) |
Rds On (Max) @ Id, Vgs | 60mOhm @ 9.8A, 10V | 63mOhm @ 8.4A, 10V | 9Ohm @ 800mA, 10V | 60mOhm @ 8.6A, 10V |
Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 15 nC @ 10 V | 15.5 nC @ 10 V | 13 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V | 590 pF @ 25 V | 520 pF @ 25 V | 630 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | QFET® | QFET® | QFET® | QFET® |
Vgs (Max) | ±25V | ±25V | ±30V | ±20V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 2.5V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
Entworf fir Source Voltage (Vdss) | 80 V | 60 V | 1000 V | 60 V |
Supplier Device Package | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252AA | TO-252AA |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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